MST Advantages for the Most Advanced Semiconductor Processes

Published: August 2, 2022

MST Advantages for the Most Advanced Semiconductor Processes

Jeff Lewis, SVP Business Devt. and Marketing

Atomera is excited to publish our latest white paper, Smoothing the Surface:  MST Turbo-Charges GAA Devices, from Dr. Robert Mears and Hideki Takeuchi.  This white paper describes Atomera’s latest analyses showing the MST film has significantly higher performance benefits for advanced nodes than we originally thought – especially for the latest gate-all-around (GAA) and nanosheet structures.  We call it “Smoothing the Surface” because this performance comes from MST’s ability to reduce surface roughness scattering. Surface roughness scattering is the dominant mobility degradation mechanism in advanced process nodes, and is one of the major contributors in legacy nodes as well.  Based on our latest measurements, MST should provide up to 1 node of drive current improvement to a GAA / nanosheet transistor.  Combined with MST’s demonstrated ability to reduce coulombic scattering, Atomera can now demonstrate MST’s significant mobility improvements across all nodes from 180nm down to 2nm.

Please read the white paper for details on this exciting research, and stay tuned for more information as Atomera continues to analyze this phenomenon.